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MRF6S9160Hr3/hsr3 replaced by mrfe6s9160hr3/hsr3. refer to device migration pcn12895 for more details. MRF6S9160Hr3 MRF6S9160Hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for n - cdma, gsm and gsm edge base station applications with frequencies from 865 to 960 mhz. suitable for multicarrier amplifier applications. ? typical single - carrier n - cdma performance @ 880 mhz: v dd = 28 volts, i dq = 1200 ma, p out = 35 watts avg., is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 20.9 db drain efficiency ? 30.5% acpr @ 750 khz offset ? - 46.8 dbc in 30 khz bandwidth gsm edge application ? typical gsm edge performance: v dd = 28 volts, i dq = 1200 ma, p out = 76 watts avg., full frequency band (865 - 895 mhz) power gain ? 20 db drain efficiency ? 45% spectral regrowth @ 400 khz offset = - 66 dbc spectral regrowth @ 600 khz offset = - 75 dbc evm ? 2% rms gsm application ? typical gsm performance: v dd = 28 volts, i dq = 1200 ma, p out = 160 watts, full frequency band (921 - 960 mhz) power gain ? 20 db drain efficiency ? 58% ? capable of handling 10:1 vswr, @ 28 vdc, 880 mhz, 160 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 81 c, 160 w cw case temperature 73 c, 35 w cw r jc 0.31 0.33 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. lifetime buy last order 3 apr 08 last ship 1 oct 08 document number: MRF6S9160H rev. 2, 8/2008 freescale semiconductor technical data MRF6S9160Hr3 MRF6S9160Hsr3 880 mhz, 35 w avg., 28 v single n - cdma lateral n - channel rf power mosfets case 465a - 06, style 1 ni - 780s MRF6S9160Hsr3 case 465 - 06, style 1 ni - 780 MRF6S9160Hr3 ? freescale semiconductor, inc., 2005 - 2006, 2008. all rights reserved.
2 rf device data freescale semiconductor MRF6S9160Hr3 MRF6S9160Hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1a (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 525 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v dd = 28 vdc, i d = 1200 madc, measured in functional test) v gs(q) 2 3 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 3.6 adc) v ds(on) 0.1 0.2 0.3 vdc dynamic characteristics (1) output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 80.2 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.2 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1200 ma, p out = 35 w avg. n - cdma, f = 880 mhz, single - carrier n - cdma, 1.2288 mhz channel bandwidth carrier. acpr measured in 30 khz channel bandwidth @ 750 khz offset. par = 9.8 db @ 0.01% probability on ccdf power gain g ps 20 20.9 23 db drain efficiency d 29 30.5 ? % adjacent channel power ratio acpr ? - 46.8 -45 dbc input return loss irl ? -17 -9 db typical gsm edge performances (in freescale gsm edge test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1200 ma, p out = 76 w avg., 865 mhz MRF6S9160Hr3 MRF6S9160Hsr3 3 rf device data freescale semiconductor figure 1. MRF6S9160Hr3(sr3) test circuit schematic z1 0.426 x 0.080 microstrip z2 0.813 x 0.080 microstrip z3 0.471 x 0.080 microstrip z4 0.319 x 0.220 microstrip z5 0.171 x 0.220 microstrip z6 0.200 x 0.425 x 0.630 taper z7 0.742 x 0.630 microstrip z8 0.233 x 0.630 microstrip z9 0.128 x 0.630 microstrip z10 0.134 x 0.630 microstrip z11 0.066 x 0.630 microstrip z12 0.630 x 0.425 x 0.220 taper z13 0.120 x 0.220 microstrip z14 0.292 x 0.220 microstrip z15 0.023 x 0.220 microstrip z16 0.030 x 0.220 microstrip z17 0.846 x 0.080 microstrip z18 0.440 x 0.080 microstrip z19 0.434 x 0.080 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1 rf input c1 c4 z2 z3 z4 z5 z6 dut z8 z9 z10 c11 c12 c15 c2 rf output c3 z7 z11 z12 z13 z16 z17 z18 z19 c18 c16 b1 v bias l1 l2 c20 c21 c22 c23 c24 v supply + c14 z15 z14 c13 c17 + r2 c19 r1 b2 c6 c5 c8 c7 c10 c9 table 5. MRF6S9160Hr3(sr3) test circuit component designations and values part description part number manufacturer b1, b2 ferrite beads, small 2743019447 fair rite c1, c2, c19 47 pf chip capacitors atc100b470jt500xt atc c3, c11 0.8 - 8.0 pf variable capacitors, gigatrim 27291sl johanson c4 2.7 pf chip capacitor atc100b2r7jt500xt atc c5, c6 15 pf chip capacitors atc100b150jt500xt atc c7, c8 12 pf chip capacitors atc100b120jt500xt atc c9, c10 4.3 pf chip capacitors atc100b4r3jt500xt atc c12 8.2 pf chip capacitor atc100b8r2jt500xt atc c13, c14 3.9 pf chip capacitors atc100b3r9jt500xt atc c15 0.6 - 4.5 pf variable capacitor, gigatrim 27271sl johanson c16 22 pf chip capacitor atc100b220jt500xt atc c17 1 f, 50 v tantalum capacitor t491c105k0j0at kemit c18 20k pf chip capacitor cdr35bp203akys kemit c20 180 pf chip capacitor atc100b181jt500xt atc c21, c22, c23 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c24 470 f, 63 v electrolytic capacitor ekme630ell471mk25s united chemi - con l1, l2 10 nh inductors 0603hc coilcraft r1 180 , 1/4 w chip resistor crcw12061800fkea vishay r2 10 , 1/4 w chip resistor crcw120610r0fkea vishay lifetime buy last order 3 apr 08 last ship 1 oct 08
4 rf device data freescale semiconductor MRF6S9160Hr3 MRF6S9160Hsr3 figure 2. MRF6S9160Hr3(sr3) test circuit component layout cut out area c16 900 mhz rev. 2 c17 b1 c18 c19 r2 r1 l1 c1 c3 c4 c6 b2 c24 c22 c23 c21 c7 c9 c5 c2 c15 c13 c12 c11 c10 c8 l2 c20 c14 lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9160Hr3 MRF6S9160Hsr3 5 rf device data freescale semiconductor typical characteristics ?17 ?5 ?8 ?11 ?14 ?20 g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) 920 840 irl g ps acpr f, frequency (mhz) figure 3. single - carrier n - cdma broadband performance @ p out = 35 watts avg. 910 900 890 880 870 860 850 ?65 32 28 24 ?40 ?50 ?55 d , drain efficiency (%) d v dd = 28 vdc, p out = 35 w (avg.) i dq = 1200 ma, n?cdma is?95 (pilot, sync, paging, traffic codes 8 through 13) ?60 ?45 26 30 20.9 20.6 20 19.4 18.8 18.2 17.9 18.5 19.1 19.7 20.3 alt1 ?15 ?3 ?6 ?9 ?12 ?18 g ps , power gain (db) irl, input return loss (db) acpr (dbc), alt1 (dbc) 920 840 irl g ps acpr f, frequency (mhz) figure 4. single - carrier n - cdma broadband performance @ p out = 70 watts avg. 910 900 890 880 870 860 850 ?60 44 40 36 ?30 ?42 ?48 d , drain efficiency (%) d v dd = 28 vdc, p out = 70 w (avg.) i dq = 1200 ma, n?cdma is?95 (pilot, sync, paging, traffic codes 8 through 13) ?54 ?36 38 42 20.3 20 19.4 18.8 18.2 17.6 17.3 17.9 18.5 19.1 19.7 alt1 figure 5. two - tone power gain versus output power 100 15 23 1 i dq = 1800 ma 1500 ma p out , output power (watts) pep 21 19 17 10 400 g ps , power gain (db) 16 600 ma v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements, 100 khz t one spacing 900 ma figure 6. third order intermodulation distortion versus output power ?20 1 i dq = 600 ma p out , output power (watts) pep 100 ?30 ?40 ?50 ?70 10 intermodulation distortion (dbc) imd, third order ?10 900 ma 1800 ma 400 1500 ma v dd = 28 vdc, f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements, 100 khz t one spacing 22 20 18 1200 ma ?60 1200 ma lifetime buy last order 3 apr 08 last ship 1 oct 08
6 rf device data freescale semiconductor MRF6S9160Hr3 MRF6S9160Hsr3 typical characteristics figure 7. intermodulation distortion products versus output power 10 ?80 ?10 7th order p out , output power (watts) pep 5th order 3rd order ?20 ?30 ?40 ?50 1 400 imd, intermodulation distortion (dbc) ?60 ?70 100 v dd = 28 vdc, i dq = 1200 ma f1 = 880 mhz, f2 = 880.1 mhz two?tone measurements figure 8. intermodulation distortion products versus tone spacing 10 ?70 0 7th order two?tone spacing (mhz) 5th order 3rd order ?20 ?30 ?40 ?50 1 100 imd, intermodulation distortion (dbc) v dd = 28 vdc, p out = 70 w (avg.) i dq = 1200 ma, two?tone measurements (f1 + f2)/2 = center frequency of 880 mhz ?10 0.1 figure 9. pulsed cw output power versus input power 40 61 p6db = 54.7 dbm (294.78 w) p in , input power (dbm) v dd = 28 vdc, i dq = 1200 ma pulsed cw, 8 sec(on), 1 msec(off) f = 880 mhz 59 57 53 47 32 30 36 34 actual ideal 51 55 26 p out , output power (dbm) 49 28 38 p3db = 53.98 dbm (249.98 w) p1db = 53.02 dbm (200.36 w) acpr (dbc), alt1 (dbc) figure 10. single - carrier n - cdma acpr, alt1, power gain and drain efficiency versus output power 0 ?80 p out , output power (watts) avg. 60 ?20 40 ?30 30 ?40 20 ?50 ?60 1 10 100 10 v dd = 28 vdc, i dq = 1200 ma f = 880 mhz, n?cdma is?95 (pilot, sync, paging, traffic codes 8 through 13) g ps d , drain efficiency (%), g ps , power gain (db) 50 ?70 d acpr 300 alt1 t c = ?30 c 85 c 25 c ?30 c 25 c 85 c ?30 c 25 c 85 c ?60 lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9160Hr3 MRF6S9160Hsr3 7 rf device data freescale semiconductor typical characteristics d , drain efficiency (%) figure 11. power gain and drain efficiency versus cw output power 16 0 p out , output power (watts) cw 23 70 21 60 20 50 30 20 1 10 100 17 v dd = 28 vdc i dq = 1200 ma f = 880 mhz g ps g ps , power gain (db) 22 10 d 300 t c = ?30 c ?30 c 25 c 85 c 19 18 40 85 c figure 12. power gain versus output power p out , output power (watts) cw g ps , power gain (db) v dd = 24 v 300 16 21 0 200 50 17 100 150 19 18 20 i dq = 1200 ma f = 880 mhz 28 v 32 v 250 250 10 8 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 35 w avg., and d = 30.5%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 7 10 6 10 5 110 130 150 170 190 mttf (hours) 210 230 lifetime buy last order 3 apr 08 last ship 1 oct 08
8 rf device data freescale semiconductor MRF6S9160Hr3 MRF6S9160Hsr3 n - cdma test signal 10 0.0001 100 0 peak?to?average (db) figure 14. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 750 khz offset. alt1 measured in 30 khz bandwidth @ 1.98 m hz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) . . . . . . .. . . . . . .. . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . ... . . .. . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .. . . .. . . . . . . . . . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . .. . . . . . . .... . . . . . . . ... . . . ... .. .. . .. . .. . . . . . . . . ... . . . . ... . . . . . . . . . . .. ... . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... ... . . . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . .. .. .. ... . . . . . .. ... . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . .. . . .. . . . . . . . . . . . . . . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . .. . .. ... . . . . . .... . . . . . . . . .. . . . . . . . . . . . . . . . . . . ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 +acpr in 30 khz integrated bw 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 15. single - carrier n - cdma spectrum ?acpr in 30 khz integrated bw ?alt1 in 30 khz integrated bw +alt1 in 30 khz integrated bw lifetime buy last order 3 apr 08 last ship 1 oct 08
MRF6S9160Hr3 MRF6S9160Hsr3 9 rf device data freescale semiconductor figure 16. series equivalent source and load impedance f mhz z source z load 850 865 880 1.20 + j0.03 1.31 + j0.22 1.26 + j0.15 0.61 - j1.27 0.66 - j1.15 0.64 - j1.05 v dd = 28 vdc, i dq = 1200 ma, p out = 35 w avg. z o = 2 z load f = 850 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 910 mhz z source 895 910 1.26 + j0.32 1.32 + j0.28 0.55 - j0.90 0.48 - j0.74 f = 850 mhz f = 910 mhz lifetime buy last order 3 apr 08 last ship 1 oct 08
10 rf device data freescale semiconductor MRF6S9160Hr3 MRF6S9160Hsr3 package dimensions case 465 - 06 issue g ni - 780 MRF6S9160Hr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465a - 06 issue h ni - 780s MRF6S9160Hsr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator)
MRF6S9160Hr3 MRF6S9160Hsr3 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 2 aug. 2008 ? listed replacement part and device migration notification reference number, p. 1 ? removed lower thermal resistance and low gold plating bullets from features section as functionality is standard, p. 1 ? removed total device dissipation from max ratings table as data was redundant (information already provided in thermal characteristics table), p. 1 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 1 ? corrected v ds to v dd in the rf test condition voltage callout for v gs(q) , on characteristics table, p. 2 ? removed forward transconductance from on characteristics table as it no longer provided usable information, p. 2 ? updated pcb information to show more specific material details, fig. 1, test circuit schematic, p. 3 ? updated part numbers in table 5, component designations and values, to latest rohs compliant part numbers, p. 3 ? adjusted scale for fig. 8, intermodulation distortion products versus tone spacing, to show wider dynamic range, p. 6 ? removed lower voltage tests from fig. 12, power gain versus output power, due to fixed tuned fixture limitations, p. 7 ? replaced fig. 13, mttf versus junction temperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? added product documentation and revision history, p. 11
12 rf device data freescale semiconductor MRF6S9160Hr3 MRF6S9160Hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005 - 2006, 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF6S9160H rev. 2, 8/2008

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